 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| geometry process details principal device types 1n3600 1n4150 cmpd4150 gross die per 4 inch wafer 30,394 process cpd41 switching diode high current switching diode chip process epitaxial planar die size 19.7 x 19.7 mils die thickness 8.0 mils anode bonding pad area 6.5 x 6.5 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r4 (22-march 2010)
process cpd41 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CPD4110
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |